to ? 220f 1. base 2. collect or 3. emitter jiangsu changjiang elec tron ics technology co., ltd to -220f plastic-encapsulate transistors KTD2061 transistor (npn) fea tures z high breakdown voltage z high transition frequency z high current z complementary to ktb1369 maximum ratings (t a =25 unless otherw ise noted) electrical characteristics (t a =25 unless otherw ise specified) parameter symbol test conditions min typ max unit collecto r-base breakdown voltage v (br)cb o i c =100a,i e =0 200 v collecto r-emitter breakdown voltage v (br)ce o i c =10ma,i b =0 180 v emitter-ba se breakdown voltage v (br )ebo i e =10a,i c =0 5 v collecto r cut-off current i cbo v cb =200v ,i e =0 1 a emitter cut-off current i ebo v eb =5v ,i c =0 1 a dc curr ent gain h fe v ce =10v , i c =400ma 70 240 collecto r-emitter saturation voltage v ce(sa t) i c =500ma,i b =50ma 1 v base-emitter vo ltage v be v ce =5v , i c =500ma 1 v tr ansition frequency f t v ce =10v,i c =400ma 100 mhz classification of h fe ran k o y ran ge 70-140 120-240 symbol paramete r value unit v cbo collector-bas e voltage 200 v v ceo collector-emitter v oltage 180 v v ebo emitter-base vo ltage 5 v i c collector curr ent 2 a p c collector po wer dissipation 2 w r ja thermal resist ance from junction to ambient 62.5 / w t j junction temperature 150 t stg st orage temperature -55~+150 www.cj-elec.com 1 c , may ,201 6 1 3 2
www.cj-elec.com 2 c , may ,201 6 to-220f package outline dimensions min. ma x . min. max. a 4.300 4.700 0.169 0.185 a1 a2 2.800 3.200 0.110 0.126 a3 2.500 2.900 0.098 0.114 b 0.500 0.750 0.020 0.030 b1 1.100 1.350 0.043 0.053 b2 1.500 1.750 0.059 0.069 c 0.500 0.750 0.020 0.030 d 9.960 10.360 0.392 0.408 e 14.800 15.200 0.583 0.598 e f h 0.000 0.300 0.000 0.012 h1 h2 l 28.000 28.400 1.102 1.118 l1 1.700 1.900 0.067 0.075 l2 0.900 1.100 0.035 0.043 2.700 ref. 3.500 ref. 0.138 ref. 0.106 ref. 0.800 ref. 0.500 ref. 0.031 ref. 0.020 ref. symbol dimensions in millimeters dimensions in inches 2.540 typ. 0.100 typ. 1.300 ref. 0.051 ref.
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